| PART |
Description |
Maker |
| BUT11 BUT11A |
Silicon Diffused Power Transistor(硅扩散功率型晶体
Silicon diffused power transistors
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| 6F80 12F 12F10 12F100 12F100B 12F10B 12F120 12F120 |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls
6,12 and 16 Amp Diffused Silicon Rectifier Diodes
|
IRF[International Rectifier]
|
| BU2520DW |
Silicon Diffused Power Transistor(纭???ｅ?????朵?绠?
Silicon Diffused Power Transistor(硅扩散功率型晶体 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BDY28 185T2 183T2 BDY27 184T2 BDY26 185T2C |
250V NPN silicon transistot, diffused mesa
200V NPN silicon transistot, diffused mesa
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-3 晶体管|晶体管|叩| 250V五（巴西）总裁| 6A条一（c）|3
NPN SILICON TRANSISTORS DIFFUSED MESA
180V NPN silicon transistot, diffused mesa
|
Cypress Semiconductor, Corp.
List of Unclassifed Manufacturers
ETC[ETC]
Comset Semiconductors
|
| IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|
| 2SC2073A01 2SC2073A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
|
TOSHIBA[Toshiba Semiconductor]
|
| BUW11AW BUW11W |
Silicon diffused power transistors 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BU2708AF |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BU2708AF |
Silicon Diffused Power Transistor
|
Philips
|
| BUJ302A BUJ302 |
Silicon Diffused Power Transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
